By Leo Young (Eds.)

ISBN-10: 1483199452

ISBN-13: 9781483199450

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30. Wright, M. L. Wide-range garnet-tuned tunnel-diode oscillator. Proc. IEEE 52, 631 (1964). 31. Kotzebue, K. L. A wide-range, electronically-tuned tunnel diode microwave oscillator. Proc. IEEE 51, 488-489 (1963). 31a. Hornbostel, D. H. 5-10 GHz YIG-tuned tunnel diode oscillator. Proc. IEEE 53, 1751 (1965). 32. Sterzer, F. Stability of tunnel-diode oscillators. RCA Rev. 23, 396-406 (1962). 33. Wallmark, J. , and Dansky, A. H. Nonlinear biasing resistors for microwave tunneldiode oscillators. IEEE, Trans.

11,260-262 (1963). 34. Sie, J. J. Absolutely stable hybrid coupled tunnel diode amplifier. Proc. IRE 48, 1321 and 1783 (1960). 35. Feist, W. M. Noise performance and stability of a hybrid coupled tunnel diode amplifier. Proc. IRE 49, 975 (1961). 36. Getsinger, W. J. Prototypes for use in broadbanding reflection amplifiers. IEEE Trans. Microwave Theory Tech. 11, 486-497 (1963). 37. Scanlan, J. , and Lim, J. T. A design theory for optimum broadband reflection amplifiers. IEEE, Trans. Microwave Theory Tech.

Equation (1) also gives the obvious result of our infinite area device: Xc must go to zero. It then follows that when the "optimum" transistor has been fabricated, whether it is a single unit or a parallel combination of individual units, there will always be a trade between device impedance level and power output capability. Thus Eq. (1) allows a prediction of the results attainable from higher-frequency transistors when and if they can be fT IN 6C l/2 FIG. 4. (PmXc) versus fti (fr) for existing transistors, including theoretical limit curves of Johnson and De Loach.

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